GaN Epitaxy Development Lead

Infineon Technologies AG in Singapore seeks a GaN Epitaxy Development Engineer to design epitaxial structures, optimize MOCVD recipes, and drive transfer to high‑volume manufacturing.

You will use DOE and SPC to improve processes, analyze XRD/SEM/TEM data, mentor engineers, and influence technology roadmaps across device, process integration and failure analysis teams. Collaborate with global teams to advance GaN-on-Si or GaN-on-Sapphire applications.