Principal Engineer - GaN Epitaxy Development

As a GaN Epitaxy Development Engineer on our Research & Development team, you'll merge creativity with technical expertise to shape the future of technology, driving groundbreaking projects and bringing new ideas to life.

• Design GaN epitaxial structures (e.g., buffer layers, superlattices, and HEMT structures) based on specific device performance targets.
• Direct hands‑on MOCVD (Metal‑Organic Chemical Vapor Deposition) recipe optimization.

• Transition new epitaxial processes from R&D into high‑yield, high‑volume manufacturing.
• Address manufacturability hurdles like defect density, wafer stress, and layer uniformity.

• Utilize Design of Experiments (DOE) and Statistical Process Control (SPC) to monitor and improve processes.
• Analyze characterization data using techniques ...